We provide different high efficiency wafer-based cells testing solution.
Our goal is to implement elegant solution to test and measure challenges in silicon PV. Our instruments and analysis techniques are targeted at the problems that matter, are based on a firms device-physics foundation, and are by design, cost-effective for the application.
We have dedicated to developing and applying new tools and for analysis and Process optimization for R&D and manufacturing in silicon solar cells and integrated circuits
For achieving highest efficiency at lowest manufacturing cost, we offer tools for the following processes which are required to be monitored:
- Incoming wafer
- Metal grid
- Electrodes
- Buffer or seed layer
- Tunnel oxide
- Passivation layer
Looking for optimizing your process? We have Lifetime measurement instruments for Silicon PV Process Control from Sinton Instruments, INC. USA
Solution for contactless measurement of true bulk lifetime to measure monocrystalline and multicrystalline silicon ingots and bricks without requiring surface passivation, enabling direct quality assessment immediately after growth. The system delivers simple and accurate measurements compliant with SEMI PV-13 standards. Shock-absorbing, retractable pads on the BLS-I conform to ingot curvature, ensuring reliable measurements on both curved ingots and flat brick surfaces.
The WCT-120 is a high-accuracy wafer measurement instrument that provides industry-leading, calibrated analysis of carrier recombination lifetime and is fully compliant with SEMI PV-13 standards. An affordable tabletop silicon lifetime and wafer metrology system designed for both device research and industrial process control, while the WCT-120MX is optimized for 230 mm wafer measurements. These instruments feature Sinton Instruments’ proprietary Quasi-Steady-State Photoconductance (QSSPC) technique. By combining QSSPC with transient photoconductance decay measurements, the system can measure wafer lifetimes from 10 ns to over 10 ms. This dual-technique approach supports effective monitoring of multicrystalline wafers, dopant diffusions, and both low- and high-lifetime samples across multiple processing stages.
The WCT-120PL enables calibrated measurement of silicon wafer carrier recombination lifetime using both the standard Quasi-Steady-State Photoconductance (QSSPC) method and the photoluminescence (QSSPL) technique. It builds on the proven measurement and analysis capabilities of the WCT-120, with the added integration of a photoluminescence detector. This allows accurate evaluation of PL lifetime as well as sample doping.
- Detect Subtle Nonuniformities: Visualize spatial variations in material quality, diffusion profiles, and defect distribution that standard lifetime measurements may miss.
- Identify Process Anomalies Early: Spot issues like emitter irregularities, contamination, or handling tool marks before they affect downstream yield or performance
- Strengthen R&D and Production Insight: Whether refining new cell designs or monitoring batch consistency, PL imaging adds a critical visual dimension to your analysis toolkit.
UPGRADE your existing WCT-120 With Powerful photoluminescence (PL) imaging capabilities without the cost or complexity standalone system. Easy-to-integrate add-on mounts directly onto the WCT filter tray, enabling seamless PL imaging can be part of your existing WCT lifetime measurement workflow. No extra footprint. No extra hassle.
Primary Application: Step by step monitoring and optimization of Fabrication process using QSSPC or transient lifetime measurement alongside a PL measurement.
Offers Calibrated Analysis of Temperature dependent carrier recombination lifetime. The WCT-120TS is a wafer lifetime measurement system designed to provide calibrated analysis of temperature-dependent carrier recombination lifetime. It extends the capabilities of the WCT-120 by enabling lifetime measurements of silicon wafers over a wide temperature range from 25 °C to 200 °C..
Inline light I-V Testing for Solar Cells
Accessories and Upgrades: Contact us